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The measurement instrument BVM 729 is used to investigate into the blocking characteristics of power semiconductors.
Features- Blocking voltage adjustable in a range from 10 to 3000 V
- Reverse current adjustable in a range from 50 µA to 60 mA
- Blocking voltage measurement DC or AC mode
- DC-mode: slew rate adjustable in a range from 1 to 100 V/ms
- AC-mode: voltage rise per pulse adjustable from 5 to 100 V/PULSE
- Reverse current measurement
The instrument BVM 625 is used to investigate into the behaviour of blocking voltage and reverse current of power semiconductors.
Features- Test voltage up to 3000 V
- Maximal reverse current up to 60000 µA
- Fault current protective device
The DBT 696 has been designed to provide quick and easy verification of the technical characteristics of diodes and bridges during production.
Features- Forward current adjustable from 0.1 up to 50 A
- Reverse current measurement at voltages between 10 and 2500 V
- 6 different measurements available: forward voltage, Zener voltage, EZ-measurement, breakdown voltage, ΔVBR-measurement and reverse current
- Remote operation via serial interface
- Handling via PLC interface
Das Durchlassmessgerät DM 715 dient zur Messung der Durchlassspannung von Leistungshalbleitern.
Features- Stromimpulse bis 8 kA
- Ausgangsspannungsbegrenzung einstellbar 0 bis 10 V
- Impulsdauer einstellbar im Bereich von 100 bis max. 10000 µs
- Anstiegszeit einstellbar im Bereich von 100 bis 1400 µs
- Integrierte Gate-Stromquelle 10 bis 5000 mA
Das Durchlassmessgerät DM 714 dient zur Messung der Durchlassspannung von Leistungshalbleitern.
Features- Stromimpulse bis 5 kA
- Ausgangsspannungsbegrenzung einstellbar 0 bis 30 V
- Impulsdauer einstellbar im Bereich von 300 bis 4000 µs
- Anstiegszeit einstellbar im Bereich von 100 bis 1000 µs
- Integrierte Gate-Spannungsquelle 0 bis 30 V
- VP-Messung an IGBTs
Das DM 688 dient zur Messung und Darstellung der Durchlasskennlinie sowie zur Messung der Zündeigenschaften bei Leistungshalbleitern wie Gleichrichter, Thyristoren oder Triacs.
Features- Stromimpulse bis 11 kA in den Bereichen 3/6/11/22/55/220/550/1100/2200/5500/11000 A
- Strommessung mitRogowski-Spule
- Gatestromquelle für elektrische Zündung einstellbar im Bereich von 1 bis 6000 mA
- Lichtzündung über Laserdiode, Strombereich einstellbar von 10 bis 2000 mA
- Hilfsspannungsquelle UAK 0 bis 300 V / 2,7 A
- Spannungsmessbereich bis 10 V
Das DM 678 ist eine Kombination aus Durchlassmessgerät und Messstellenumschalter. Es dient zur Messung der Durchlassspannung an Leistungshalbleitermodulen mit bis zu 16 Leistungsanschlüssen.
Features- Prüfströme bis 2 kA bei einer Impulsdauer von 500 bis 2000 µs
- Messmethoden für Dioden, NPN- Bipolar- Transistoren, N-MOS-FETs und IGBTs
- 16 Kanäle jeweils mit FORCE-, SENSE-, Hilfsemitter- und 2-fach GATE- Anschlüssen
- Schaltfunktion des Hauptanschlusses über Relaismatrix mit Pneumatiksteuerung
- Lebensdauerüberwachung und Selbsttestprogramm der Relais
- Integrierte Messstromquelle 1 bis 2000 mA
The forward voltage measuring device DM 659 is developed for the measurement of the forward voltage of power semiconductors and of the output and transfer characteristics of IGBTs.
Features- Measurements of the output and transfer characteristics of IGBTs
- Current pulse up to 5 kA Selectable energy of the current pulse
- Pulse width (trapezium) adjustable in a range from 100 up to 500 µs
- Single measurements and recording of characteristic curves
- Integrated gate current source from 1 to 500 mA and voltage source from 0 to 20 V
The DT 616 tester is used for series measurement of diodes.
Features- Forward voltage measurement
- Zener voltage measurement
- EZ-measurement
- Breakdown voltage measurement
- ΔVBR-measurement
- Reverse current measurement
- Kelvin contact measurement method
- Contact and polarity test of each measurement cycle
- Separate error counter for the different test steps
The DTS 713 is used to determine the dynamic characteristics of power semiconductors during switching operation.
Features- Static pre-test (reverse current and blocking voltage)
- Integrity test before and after each dynamic test
- Single and multiple pulse test of single and multiple modules on inductive load
- Check of short circuit characteristics
- 3-level-test to verify the dynamic characteristics
- Avalanche-test
- Gate voltage programmable
Das DUDT 702 dient zur Prüfung des Merkmals du/dt- Festigkeit von Thyristoren.
Features- Maximale Prüfspannung 2000 V
- Maximaler Ausgangsstrom bis ca. 20 mA
- Spannungssteilheit einstellbar in den Bereichen 200 / 500 / 1000 / 2000 V/µs
- Bedienung sowohl manuell als auch über serielle Schnittstelle möglich
The instrument FVM 717 is used to investigate into the behaviour of forward voltage of power semiconductors.
Features- Investigation of power semiconductors like N- and P-MOSFETS, NPN- and PNP-transistors, IGBTs and ESBTs
- Load current up to 300 A
- Gate voltage adjustable up to 30 V
- Base current up to 100 A
- Load duration 200 up to 2000 µs
- Forward voltage measurement
- Reading back the test conditions load current, base current, gate current and gate voltage
The instrument FVM 625 is used to investigate into the behaviour of forward voltage of power semiconductors.
Features- Load current 1 up to 600 A (max. output voltage 24 V)
- Load duration 300 up to 2000 µs
- Gate voltage 1.0 up to 20.0 V
- Gate current 1 up to 500 mA
- Forward voltage measurement range up to 5.000 V
Der Gate-Generator GG 670 wurde zur Erzeugung von definierten Gate-Zündimpulsen an Thyristoren entwickelt.
Features- Trapezförmige Gate-Zündim-pulse für den Thyristortest
- Zündstromgenerator einstellbar im Bereich von 50 mA bis 5,0 A
- Impulsdauer einstellbar im Bereich von 10 bis 1000 µs
- Anstiegs- bzw. Abfallzeit einstellbar im Bereich von 0,5 bis 50 µs
- Drei Triggerquellen: manuell, extern und netzsynchron
Das GK 668 dient zur Kapazitätsmessung von Kondensatoren, insbesondere für die Messung von Kondensatorwickeln, die sich noch in einem Fertigungsstadium ohne niederohmige Kontaktmöglichkeit befinden.
Features- Kapazitätsmessung durch Ladungsbestimmung = > Messung auch in frühem Fertigungsstadium möglich
- Messbereiche 20 µF / 200 µF / 2000 µF
- Messspannung 15 V
- Digitale Messwertanzeige
- Max. Messfehler ±0,2% ±1 Digit
- LED-Statusanzeige
The instrument GM 664 is used to investigate into the behavior of gate leakage current and gate charge of MOS- and IGBT-transistors during production.
Features- Test voltage adjustable from 5 up to 75 V
- Gate leakage current measurement ranges: 10 / 100 nA; 1 / 10 / 100 µA; 1 / 10 mA
- Gate charge measurement range from 0 to 50.0 µC
The Gate stress generator GSG 664 is used to stress power semiconductors, especially IGBTs, by a selection pulse.
Features- Test voltage adjustable from 5 up to 75 V
- Pulse duration adjustable in a range from 10 to 100 µs ± 1 µs
- Rise and fall times adjustable from 5 to 50 µs
- Output voltage 80 V
The test system HTRB 689 is used for determination of the robustness and long term stability of diodes and IGBT modules under high temperature reverse bias condition.
Features- Test voltage up to ± 2000 V
- Measurement of 18 single specimens or 9 half bridge modules on 3 heating places
- Bias current measurement up to 150 mA per channel
- Temperature measurement and control up to 200° C
- Three different operation modes: half-wave (50 Hz), half-wave (100 Hz) and smoothed halve-wave (100 Hz)
- Effective sample rate: 50Hz/13samples
The instrument IP 717 is used to investigate into the behaviour of isolation of electrical devices, e.g. DCB-ceramic of power semiconductors.
Features- Measurement voltage up to 5 kVeff
- Current measuring range up to 10 mA
- Current limit max. 20 mA
- Indicating the measurement results via LED lamps
- Defining the measurement parameters using a serial interface RS 232 (optically isolated)
- Guarding
The instrument IP 630 is used to investigate into the behaviour of isolation of electrical devices, e.g. DCB-ceramic of power semicon-ductors.
Features- Measurement voltage up to 5 kVeff
- Current measuring range up to 2 mA
- Current limit max. 5 mA
- Indicating the measurement results via LED lamps
- Defining the measurement parameters using a serial interface RS 232 (optically isolated)
- Guarding
The instrument IP 625 is used to investigate into the behaviour of isolation of electrical devices (especially capacitive specimen), e.g. DCB-ceramic of power semiconductors.
Features- Test voltage 0 up to 5 kVeff
- Current measuring range 2 mA
- Current limitation:maximum 5 mA
- Test result indication by signal lamps
- Test parameter setting via serial interface RS 232
- Guarding
The instrument IP 619 is used to investigate into the behavior of isolation of electrical devices.
Features- Test voltage 0 up to 10 kV (DC)
- Current limitation:
ca. 1.5 mA continuous current, ca. 10 mA pulse, limitation by resistor - Analogue outputs
- Specimen contact via standard test pistol with integrated remote control switch
- Indication of test results by signal lamps and acoustic signal
The KML 724 is used to test the blocking characteristics of power semiconductors.
Features- Blocking voltage generation and measurement with 10ms half sinewaves up to 14 kV
- Current range up to 2000 mA
- Voltage generation with parametrizable signal form “Preußenhelm”
- Stored digital display of peak current and peak voltage
- Automatically adjustment of voltage, each for fundamental wave and peak
- Overload-protection
- Integrated test chamber
The KML 710 has been designed to test the blocking characteristics of power semiconductors.
Features- Blocking voltage up to 15 kV at 100 mA and 13 kV at 200 mA
- Measurements using 10ms-half-wave signals in forward and blocking direction with limit value control
- Stored digital display of peak current and peak voltage
- Automatic and manual adjustment of voltage possible
- Real-time curve tracer via software on a digital monitor
- Curve trace analysis and data storage
- Overload-protection
The measuring bridge KTM 720 is used to measure the capacity deviation and the loss factor (tan δ) of capacitors at a defined frequency (versions 120 Hz or 10 kHz available).
Features- Nominal capacity value adjustable from 1 to 500 μF
- Limit values adjustable from -20.00 to +20.00 %
- Loss factor tan δ adjustable from 0.010 to 20.000 %
- Measurement frequency either 120 Hz or 10 kHz (depending on version)
- tan δ measurement with high resolution (10-5)
- Serial interface for automated measuring
The measuring bridge is used for capacity measurement of power capacitors at 50 Hz and nominal voltage.
Features- Capacity and tand - measurement at maximum load:
400 µF at max. 1000 V
800 µF at max. 500 V
4000 µF at max. 100 V - tanδ - measurement at a resolution of 10–5
- Capacity tolerance measurement at a resolution of 0.01 % of nominal value
- Automatically measurement and documentation of series measurement via serial interface
- Controlling of generator voltage due to correction of mains
voltage variation
The measuring device for leakage currents LCM 625 is used for measuring the gate leakage currents of IGBTs and MOS-transistors during production (series measurement).
Features- Measuring ranges: 10 µA / 1 µA / 100 nA / 10 nA
- Adjustable measuring duration: 0.030 ... 5 s
- Adjustable testing voltage: 10.0 ... 50.0V
- Remote control via serial interface
Das LRT 703 dient zur Messung von kleinen elektrischen Widerständen, wie z.B. Sicherungen, in Produktionslinien.
Features- Widerstandsmessung im Bereich von 0 bis 10 mΩ
- Messung an bis zu 8 Prüflingen gleichzeitig
- Prüfstrom ca. 1A
- Kontaktprüfung
- SPS-Schnittstelle
- Ethernet-Schnittstelle
The instrument LRT 640 is used to measure small electric resistors in production lines, e. g. fuses.
Features- Resistance measurement at up to 4 measuring points at the same time
- Measuring range 1 up to 100 mΩ
- Contact test before each measurement
- Kelvin contact ratio metric measurement method
- PLC- and Ethernet- interface
- Short measurement duration approx. 50 ms / measuring point
The tester for power semiconductors MLH 634 is designed for fast test and characterization of power semiconductors.
Features- Sperrstrommessung von 10 µA bis 20 mA
- Sperrspannungsmessung bis 2500 V
- Gate-Threshold-Messung bis 20 V
- Durchlassspannungsmessung VF mit 0,1 bis 20 A
- Integrierter Multiplexer zur Verbindung zu anderen Messgeräten
- Polaritätsumschaltung zur Messung in Vorwärts- und Rückwärtsrichtung
MOT 691
Measuring instrument for output and transfer characteristics of power MOS transistors
Datasheet
The MOT 691 has been designed to investigate into the output and transfer characteristics of power MOS transistors.
Features- Load current up to ± 2000 A
- Forward voltage VDS adjustable in a range from 1 to 200 V
- Data logging via 4 channel transient recorder at a band width of 10 MHz
- Gate voltage source adjustable from 1 up to 20 V
- Gate pulse duration adjustable in a range from 5 to 300 µs
- Load current measurement by Rogowski integrator in the ranges ± 50, ± 100, ± 200, ± 500, ± 1000 und ± 2000 A
- Gate current measurement in a range from ± 6 A
Products
The multiplexer MU 664 is an essential component of the measuring system for power semiconductors STS 717. It is used to connect the indivudual measurement instruments to the specimen.
Features
- Multiplexer with 69 channels: 3 x 69 x 300 A (main current path), 4 x 69 x 1 A (Sense and Gate terminals), proof voltage: > 4000 V
- Gate short circuit relays to test IGBTs / MOSFETs
- Compact dimensions
- Control via serial interface
- Self-test function available in conjunction with FS 717
Products
The multiplexer MU 664 is an essential component of the measuring system TSM 664 and consists of the measurement unit and a relay matrix. It is used to connect the indivudual measurement instruments to the specimen.
Features
- Multiplexer with 9 channels: 2 x 9 x 4000 A (main current path), 2 x 9 x 2 A (Sense terminals), 2 x 9 x 2 A (Gate terminals), 9 x 2 A (auxiliary Emitter terminals), proof voltage: > 8000 V
- Universal current source for resistance measurement, contact test and self-test function
- Gate short circuit relays to test IGBTs / MOSFETs
- Compact dimensions
- Control via serial interface
The MU 624 is a component of a thermal resistance measurement system for power semiconductors. It is used to connect the terminals of the specimen with the measurement device (e. g. WM 615).
Features- 16-channel multiplexer 16 x 200 A (load current path )
- Compact dimensions (19“/ 4HE)
- Operating manually or via serial interface
- Switching by Kelvin contact measurement method, including gate-shortcircuit resistors for measuring IGBT - packages
The measurement instrument SML 726 to investigate into the blocking characteristics of power semiconductors.
Features- Blocking voltage adjustable in a range from -30 to -8000 V
- Reverse current adjustable in a range from 10 µA to 100 mA
- Blocking voltage measurement
- Reverse current measurement
- Load duration limit
Das Sperrspannungsmessgerät SML 716 dient zur Prüfung des Merkmals Sperrspannungsfestigkeit von Leistungshalbleitern.
Features- Sperrspannung einstellbar bis zu 3 kV
- Ausgangsstrom einstellbar bis zu 50 mA
- Kennlinienmessung mit 10 ms - Halbwellen. In Vorwärts - und Rückwärtsrichtung jeweils mit 2 individuell einstellbaren Grenzwertepaaren
- Automatische Einstellung des Spannungsbereiches
- Überlastschutzeinrichtung
Das Sperrspannungsmessgerät SML 701 dient zur Prüfung des Merkmals Sperrspannungsfestigkeit von Leistungshalbleitern.
Features- Sperrspannung einstellbar im Bereich von 10 bis 3000 V
- Automatische Auswahl des Spannungsbereiches aus 300 / 750 / 1500 / 3000 V
- Strombereich im Bereich von 1 µA bis 200 mA
- Gespeicherte digitale Anzeige von Spitzenstrom und Spitzenspannung
- Lastdauerbegrenzung
The SML 698 has been designed to test the blocking characteristics of power semiconductors.
Features- Blocking voltage generation and measurement with 10ms half sinewaves up to 13 kV
- Current range up to 1000 mA
- Voltage generation with parametrizable signal form “Preußenhelm”
- Stored digital display of peak current and peak voltage
- Automatical adjustment of voltage, each for fundamental wave and peak
- Overload protection
Das Messgerät SML 671 dient zur Prüfung der Sperrkennlinie von Leistungshalbleitern.
Features- Sperrspannungsbereich bis 6 kV
- Sperrstrombereich bis 10 mA
- Gespeicherte digitale Anzeige von Spitzenstrom und Spitzenspannung
- Überlastschutzeinrichtung
- Automatische oder manuelle Spannungseinstellung
- X-Y-Ausgänge zur Darstellung der Kennlinie an einem
Sichtgerät - Kennliniendarstellung auch mit reduzierter Einschaltdauer möglich
The measurement instrument SML 664 to investigate into the blocking characteristics of power semiconductors.
Features- Blocking voltage adjustable from 10 up to 8000 V
- Current range from 10 µA to 300 mA
- Blocking voltage measurement
- Reverse current measurement
- Stored digital indication of peak current and peak voltage
- Analogue outputs to display characteristic curves on a monitor
The measuring device for current surge SPG 590 is used for testing the current load capability of tantalum capacitors.
Features- Current surge generator for producing charge- and discharge current pulses up to 200 A
- Charge-, discharge resistor, separately adjustable: 0.1 ... 0.5W
- Testing voltage: 1.0 ... 100.0 V
- Charging time: 0.1 ... 500.0 ms
- Measurement of charging current: 0 ... 200 A
- Automatical test, up to 50 pulses including limit check on up to 10 measuring points
- Self-protection via maximum- and continuous-current supervision
The TLW 705 has been designed to verify the characteristics of power IGBT, MOSFET and diode modules used in power electronics during long term life cycle testing.
Features- Load current generation up to 400 A, optional to 800 A / 30 V
- On-times from 0.5 to 300 s
- Load cycles at 2 or 3 chains
- Measurement current source 200 mA
- Temperature measurement of 18 specimens with thermocouples type “K”
- Junction temperature measurements via the PN- voltage drop (for MOSFET via inverse diode)
- Automated junction temperature calibration procedure available
- Function test and measurement of the thermal resistance at each cycle
- Rack mounted industrial PC for data storage and analyses
- Safety overload monitoring and cut off
The TLW 692 has been designed to verify the characteristics of IGBT and diode modules under the condition of changing junction temperature during long term testing.
Features- Load current generation up to 300 A
- Cycle times from 0.5 to 300 s
- Measurement current source up to 200 mA
- Temperature measurement of 18 DUTs in three separate chains with 6 terminals each
- Determination of individual calibration curves for each DUT
- Determination of the junction temperature via voltage measurement and individual calibration curve
- Integrated cooling unit
- Control of an external heating/cooling unit
- Rack mounted industrial PC for data storage and analyses
- Safety overload monitoring and cut off
The test system TLW 665 is used to investigate into the behaviour of power semiconductors under load change, especially IGBTs and MOSFETs used in Power Electronics.
Features- Load Current up to 2000A
- Test current source up to 199 mA
- Measurement of 2 DUT´s possible
- Determination of an individual calibration curve for each DUT
- Junction temperature measurements via the PN- voltage drop
- Rack mounted industrial PC for data storage and analyses
- Safety overload monitoring and cut off
The test system TPS 625 is used to test power semiconductors.
The TPS 625 enables the measurement of the common characteristics of power semiconductors with only one DUT contact assignment.
Features- Measurement of common characteristics of power semiconductors
- Measurement of semiconductor packages with up to 16 main current paths
- Including isolation testing up to 5 kV
- Modular equipment construction of separate measuring devices
- Comfortable measuring software for integration into automatic test systems or automatically measuring by manually specimen feeding
Das TQ 704 dient zur Prüfung bzw. Messung der Freiwerdezeit tq bei Thyristoren.
Features- Durchlassstrom im Bereich von 10 bis 100 A
- Vorwärtsspannung bis 200 V
- Sperrspannung bis 70 V
- Maximaler Reversestrom -20 A
- tq–Messung im Bereich von 4 bis 600 µs
- Negative Gatespannung im Bereich von 0 bis -22 V zuschaltbar
- Lebensdauerüberwachung interner Sicherheitsrelais
The TSM 664 is used in the testing of power semiconductors and power semiconductor modules with up to 9 high power terminals.
Features- Sperrspannungsmessung bis zu 8 kV
- Sperrstrommessung bis 300 mA
- Durchlassspannungsmessung bis zu 4000 A, max. 500 µS
- VP-Messung
- gfs-Messung
- Gate-Leckstrommessung im Bereich von 1 nA bis 10 mA
- Gate-Ladungsmessung im Bereich von 0 bis 50 µC
- Messstellenumschalter 9 Kanäle
Das VT 712 dient zur Messung und Darstellung der Durchlasskennlinie sowie zur Messung der Zündeigenschaften bei Leistungshalbleitern wie Gleichrichter, Thyristoren oder Triacs.
Features- Stromimpulse bis 11 kA in den Bereichen 110/220/550/1100/2200/5500/11000 A
- Strommessung mit Rogowski-Spule
- Gatestromquelle für elektrische Zündung einstellbar im Bereich von 1 bis 10000 mA
- Lichtzündung über Laserdiode, Strombereich einstellbar von 10 bis 2000 mA
- Hilfsspannungsquelle UAK 0 bis 300 V / 2,7 A
- Spannungsmessbereich bis 10 V
Das Widerstands-Kondensator-Messgerät WKM 674 dient zur Messung von Prüflingen, die aus einer Parallelschaltung von Widerstands- und Kondensatorelementen bestehen.
Features- Widerstandsmessung im Bereich von 1 mΩ bis 100 Ω bei programmierbaren Messstrom im Bereich von 1 mA bis 50 mA
- Kapazitätsmessung im Bereich von 1 nF bis 1000 nF
- Temperaturmessung im Bereich von -10 bis 85 °C
- Ansteuerung über SPS-Schnittstelle möglich
The measuring system WM 707 is used to measure resistors in a range from 1 mΩ up to 2 MΩ.
Features- Measuring with constant current 1 up to 10 mA
- Resistor testing 1 mΩ up to 2 MΩ
- Determination of permissible tolerance range by setting a min. and a max. limit
- Signal lamps indicating test results
- Contact test before starting a measuring cycle
- Kelvin contact measurement method
The test system WM 699 is used to measure the thermal resistance within power semiconductors.
Features- Load current 1 to 2000A at a voltage of 15.0 V
- Suitable for SRC, diode and IGBT devices, single and double modules
- Provides short time ZTH measurements (from 2 ms) up to long time RTH tests (10 seconds and more on demand)
- Rack mounted industrial PC for system control, data storage and graphical analyses
- Control of external heating/ cooling unit
The measuring instrument WM 694 realises the measurement of the thermal resistance of power semiconductors.
Features- Load current 1 A up to 100 A at a minimum of 15.0 V
- Measurement methods to MIL STD 750E for Diodes, NPN- Bipolar Transistors, N-MOS-FETs and IGBTs
- Suitable for short time ZTH measurements (from 2 ms) up to long time RTH tests (10 seconds and more on demand)
- Manual and remote operation via serial port
- PLC- Interface
Das Widerstands-Messgerät WM 674 zur Messung von kleinen
elektrischen Widerständen im Bereich von 0 bis 1 mΩ in Produktionslinien.
Features- Widerstandsmessung im Bereich von 0 mΩ bis 1 mΩ
- Messstrom ca. 0,5 A
- Messwertkorrektur durch Berücksichtigung der Thermospannungen im Ruhezustand
- Kontaktprüfung
- Ansteuerung über SPS-Schnittstelle möglich
The measuring equipment WM 615 realises the measurement of the thermal resistance of power semiconductors.
Features- Load current up to 400 A at min. 10.0 V
- TJ –measurement during heating time via clocked load pulse (measuring during off-time)
- Measurement of difference voltage referenced to compensation voltage
- Measurement of 2 specimens (half bridge) at the same time
- Microprocessor controlled measurement, operation and data acquisition via PC
- Temperature measurement of the cooling plate at 1 or 2 points
Das ZEH 712 dient zur Prüfung von Thyristoren.
Features- Zeitoptimiertes Messverfahren für Einraststrommessung
- Gatestromquelle einstellbar im Bereich von 5 mA bis 10 A
- Anodenstromquelle einstellbar im Bereich von 0,5 bis 10 A
- Leerlaufspannung UAK einstellbar im Bereich von 0 bis 20 V bzw. 0 bis 100 V (Kondensator 2200 µF)
- Gatespannungsmessung in den Bereichen 0 bis 5,0 V oder 0 bis 100 V
- Gatestrommessung bis 10 A
The instrument ZEH 634 is used for testing thyristors.
Features- Time-optimized measurement procedure for gate trigger-, latching- and holding current
- Gate current source from 1 up to 3000 mA
- Anode current from 1 up to 5000 mA
- Open circuit voltage VAK 6 V/ 12 V
- Measurement of the gate voltage up to 5,000 V
The device ZM 608 is used for Z-voltage measurement of Zener diodes.
Features- Test current 1.0 up to 100.0 mA
- Measurement range 0 up to 200 V
- Kelvin contact measurement method
- Measurement throughput rate up to 50 specimen per second